SiS426DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
90
72
54
Package Limited
36
1 8
0
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Current Derating*
65
52
39
26
13
0
2.0
1.6
1.2
0. 8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Power, Junction-to-Case
T A - Am b ient Temperat u re (°C)
Power, Junction-to-Ambient
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68799
S12-0214-Rev. C, 30-Jan-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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